Journal
EUROPEAN PHYSICAL JOURNAL B
Volume 85, Issue 8, Pages -Publisher
SPRINGER
DOI: 10.1140/epjb/e2012-30220-2
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Funding
- National Natural Science Foundation of China [51072007, 91021017, 11047018, 60890193]
- National Basic Research Program of China [2012CB619304]
- National 973 Projects, MOST of China [2007CB936200, 2006CB921607]
- Fundamental Research Funds for the Central Universities
- National Foundation for Fostering Talents of Basic Science [J0630311]
- Program for New Century Excellent Talents in University of MOE of China
- Nebraska Research Initiative of USA [4132050400]
- China Scholarship Council
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We investigate field effect transistors (FETs) based on semiconducting armchair-edged silicene nanoribbons (ASiNRs) by using ab initio quantum transport calculations. These FETs have high performance with an I-on/I-off ratio of over 10(6) and a subthreshold swing as small as 90 mV/decade. Impressively, the output characteristic shows a saturation behavior. The drain-current saturation is an advantage with respect to device speed, but it's usually absent in carbon-based (e.g., graphene, graphene nanoribbons, carbon nanotubes, and organic single-molecule) FETs.
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