4.2 Article

Goos-Hanchen shift in bilayer graphene

Journal

EUROPEAN PHYSICAL JOURNAL B
Volume 85, Issue 3, Pages -

Publisher

SPRINGER
DOI: 10.1140/epjb/e2012-20729-7

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Funding

  1. Yumiao Foundation of Minjiang University [YKY04008]

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The quantum Goos-Hanchen (GH) shift of an electron (massive Dirac fermion) at a potential step in bilayer graphene is investigated. We show that the GH shift depends on the step height, the kinetic energy of the electron and incident angle. It is found that the GH shift can be large (positive or negative) under the suitable conditions.

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