4.2 Article

Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy

Journal

EUROPEAN PHYSICAL JOURNAL B
Volume 75, Issue 1, Pages 31-35

Publisher

SPRINGER
DOI: 10.1140/epjb/e2010-00044-3

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The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges.

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