Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 137, Issue 7, Pages 2622-2627Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja5120908
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Funding
- National Natural Science Foundation of China [11135008, 11435012, U1332131, U1332111, 11475176, U1232129]
- National Basic Research Program of China [2012CB825804]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [11321503]
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Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo4+ 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 mu(B)/Mo by the exchange interactions between sulfur vacancy and the Mo4+ 4d bandgap state at room temperature. This design opens up new possibility for effective manipulation of exchange interactions in two-dimensional nanostructures.
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