4.8 Article

Controlling the Metal to Semiconductor Transition of MoS2 and WS2 in Solution

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 137, Issue 5, Pages 1742-1745

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja5107145

Keywords

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Funding

  1. U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
  2. NSF [DMR 0955612]
  3. National Cancer Institute Center for Cancer Nanotechnology Excellence (CCNE) initiative at Northwestern University [U54A119341]
  4. Army Research Office [W911NF-13-4-0528]
  5. U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
  6. NSF-NSEC
  7. NSF-MRSEC
  8. Keck Foundation
  9. State of Illinois
  10. Northwestern University
  11. Division Of Materials Research
  12. Direct For Mathematical & Physical Scien [0955612] Funding Source: National Science Foundation

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Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. Here, we report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. This process connects the scalability of chemical exfoliation with the simplicity of solution processing, ultimately enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium.

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