Journal
ACS NANO
Volume 9, Issue 6, Pages 5976-5983Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b00736
Keywords
transition metal dichalcogenide; molybdenum ditelluride; field-effect transistor; ambipolar; polarity control
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Funding
- Japan Society for the Promotion of Science (JSPS) [25107004]
- Grants-in-Aid for Scientific Research [25107004] Funding Source: KAKEN
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A doping-free transistor made of ambipolar cc-phase molybdenum ditelluride (alpha-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.
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