Journal
ETRI JOURNAL
Volume 33, Issue 6, Pages 887-896Publisher
WILEY
DOI: 10.4218/etrij.11.0111.0321
Keywords
Inkjet-printing; OFET; dielectric; solvent
Funding
- Ministry of Knowledge Economy (MKE) [2008-F052-01]
- ISTK
- regional innovation center for industrialization of advanced chemical materials, Hanbat National Univ. [TIC04-05-42]
- MKE [A2010DD006]
- Daedeok innopolis
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001909] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [B551179-09-06-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.
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