4.8 Article

Tuning Thermal Transport in Ultrathin Silicon Membranes by Surface Nanoscale Engineering

Journal

ACS NANO
Volume 9, Issue 4, Pages 3820-3828

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nn506792d

Keywords

quasi-2D system; dispersion relations; Si membranes; lattice thermal transport; classical molecular dynamics; two-laser Raman thermometry; inelastic light scattering; phonon engineering

Funding

  1. European Commission FP7-ENERGY-FET project MER-GING, NMP QUANTIHEAT and ICT NANOTHERM [309150,604668, 318117]
  2. MPG under the MPRG program
  3. Spanish MINECO [MAT-2012-31392, CONSOLIDER CSD2010-00044]
  4. Marie Curie Postdoctoral Fellowship HeatProNano [628197]
  5. Academy of Finland [252598]
  6. Rechenzentrum Garching of Max Planck Society (MPG)
  7. ICREA Funding Source: Custom

Ask authors/readers for more resources

A detailed understanding of the connections of fabrication and processing to structural and thermal properties of low-dimensional nanostructures is essential to design materials and devices for phononics, nanoscale thermal-management, and thermoelectric applications. Silicon provides an ideal platform to study the relations between structure and heat transport since its thermal conductivity can be tuned over 2 orders of magnitude by nanostructuring. Combining realistic atomistic modeling and experiments, we unravel the origin of the thermal conductivity reduction in ultrathin suspended silicon membranes, down to a thickness of 4 nm. Heat transport is mostly controlled by surface scattering: rough layers of native oxide at surfaces limit the mean free path of thermal phonons below 100 nm. Removing the oxide layers by chemical processing allows us to tune the thermal conductivity over 1 order of magnitude. Our results guide materials design for future phononic applications, setting the length scale at which nanostructuring affects thermal phonons most effectively.

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