Journal
EPL
Volume 99, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1209/0295-5075/99/36001
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Funding
- Research Grants Council of Hong Kong SAR [CityU6/CRF/08]
- Centre for Applied Computing and Interactive Media (ACIM) of City University of Hong Kong
- Research Grant Council
- University Grant Committee of the HKSAR
- Hong Kong Baptist University
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Using equilibrium molecular dynamic simulations, we calculate the phonon thermal conductivity of a graphene-like silicon nanosheet called silicene at room temperature. We find that the in-plane thermal conductivity of silicene sheets is about one order of magnitude lower than that of bulk silicon. We further investigate the effects of vacancy defects on thermal conductivity and observe its significant diminution owing to the effect of phonon-defect scattering. Our results show that phonon transport in a silicene sheet is strongly affected by vacancy concentration, vacancy size, and vacancy boundary shape; this could be used to guide defects engineering of the thermal properties of low-dimensional silicon materials. Copyright (C) EPLA, 2012
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