Journal
EPL
Volume 99, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1209/0295-5075/99/17010
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Funding
- National Natural Science Foundation of China [10904054]
- Natural Science Foundation of Jiangxi [2009GQW008, 2010GZW0028]
- Foundation of Jiangxi Normal University [2261]
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The effect of the tensile strain on the electronic structure of the silicene is studied by using first-principles density functional theory. It is found that a semimetal-metal transition occurs when an in-plane strain larger than 7.5% is applied in silicene. The downward movement of the lowest conduction band at Gamma-point, which originates from the weakened interaction between neighboring Si atoms, leads to the transition. The proposed mechanical control of the electronic properties will widen the application of the silicene in Si-based nanotechnology. Copyright (C) EPLA, 2012
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