Journal
EPL
Volume 88, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1209/0295-5075/88/58001
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Funding
- National Natural Science Foundation of China [10904007]
- Natural Science Foundation of Hunan Province, China [08JJ4002]
- construct program of the key discipline in Changsha University of Science and Technology, China
- cluster of excellence Nanostructured Materials of the state Saxony-Anhalt, Germany
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We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap. Copyright (C) EPLA, 2009
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