Journal
EPL
Volume 87, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1209/0295-5075/87/27003
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Funding
- FAPESP [07/57630-5]
- CNPq [305227/2007-6]
- NSF [DMR-0506953, DMR-0542026]
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We present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and even quantitative predictions of the strong-disorder renormalization group approach over the entire experimentally relevant temperature range. Finally, by mapping the problem on a hard-sphere fluid, we could provide an essentially exact analytic solution without any adjustable parameters. Copyright (C) EPLA, 2009
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