Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 degrees C) solution process. A high efficiency of 15.4%, with a fill factor of similar to 80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices.