Journal
ENERGY & ENVIRONMENTAL SCIENCE
Volume 6, Issue 7, Pages 2112-2118Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ee24461j
Keywords
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Funding
- Chesonis Family Foundation
- Bosch through the MIT Energy Initiative
- NSF [CBET-1032955, ECCS-1150878, DMR-0819762 (CMSE), ECS-0335765 (CNS)]
- NRF Singapore
- NSF
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1150878] Funding Source: National Science Foundation
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We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.
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