Journal
ENERGY & ENVIRONMENTAL SCIENCE
Volume 5, Issue 8, Pages 8351-8358Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2ee21803h
Keywords
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Funding
- National High Technology Research and Development Program of China [2008AA032101]
- Natural Science Foundation of China [20990231]
- Georgia Institute of Technology
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The energy-filtering effect was successfully employed at the organic-inorganic semiconductor interface of poly(3-hexylthiophene) (P3HT) nanocomposites with the addition of Bi2Te3 nanowires, where low-energy carriers were strongly scattered by the appropriately engineered potential barrier of the P3HT-Bi2Te3 interface. The resulting P3HT-Bi2Te3 nanocomposites exhibited a high power factor of 13.6 mu W K(-2)m(-1) compared to that of 3.9 mu W K-2 m(-1) in P3HT. The transport characteristics of nanocomposites, including the carrier concentration, mobility, and energy-dependent scattering parameter, were revealed by the experimental measurements of electrical conductivity, Seebeck coefficient, and Hall coefficient to quantitatively elucidate the carrier energy scattering at the P3HT-Bi2Te3 interface. The ability to rationally engineer the organic-inorganic semiconductor interfaces of polymer nanocomposites to achieve an improved Seebeck coefficient and power factor provides a potential route to high-performance, large-area, and flexible polymer thermoelectric materials.
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