4.8 Article

Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines

Journal

ENERGY & ENVIRONMENTAL SCIENCE
Volume 2, Issue 5, Pages 529-534

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/b822954f

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Funding

  1. Agencia Espanola de Cooperacion Internacional (AECI)
  2. Universitat Jaume I. L. O.
  3. Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET-Argentina)
  4. Agencia Nacional de Promocion Cientifica y Tecnologica (ANPCYT-Argentina)
  5. Secretaria de Ciencia y Tecnica de la Universidad Nacional de Rio Cuarto (SECYT-UNRC)
  6. Ministerio de Ciencia e Innovacion of Spain [HOPE CSD2007-00007]

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Near-IR dye sensitized solar cells are very interesting due to their potential applications in panchromatic cells, semi-transparent windows and in tandem cells. In this work we show the utilization of axially anchored Si-naphthalocyanine dye in the spectral sensitization of TiO2 nanostructured photoelectrodes. We report the first successful evaluation of a naphthalocyanine in the production of sensitized photocurrent with maximum incident photon to current efficiency (IPCE) at lambda similar to 790 nm.

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