Journal
ELECTRONICS LETTERS
Volume 50, Issue 3, Pages 197-198Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2013.3214
Keywords
band-pass filters; invertors; microstrip filters; microwave filters; resonator filters; UHF filters; i >>-4 stepped impedance resonator; fourth-order fully canonical dual-band bandpass filter; DB-BPF; dual-band i >>-4 SIR; inverter; finite transmission zero; fourth-order microstrip DB-BPF; frequency 1; 8 GHz; frequency 5; 8 GHz
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Funding
- American Society for Engineering Education
- Office of Naval Research
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A long-standing goal of GaN device research has been the development of a reliable, well-controlled process for p-GaN formation by ion implantation. Results to date have indicated an activation of 1% or less using high-temperature rapid thermal annealing (RTA) techniques and coimplantation. Although Mg is a relatively deep acceptor, this is still much less than the theoretically achievable value (8.2% based on the 160 meV acceptor level). A multicycle RTA process is presented that is capable of achieving up to 8% activation of the Mg-implanted GaN. This approaches the theoretical value, and represents a significant step in GaN device research.
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