Journal
ELECTRONICS LETTERS
Volume 50, Issue 16, Pages 1164-+Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2014.1747
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Funding
- 'Energy Efficient Power Semiconductor Technology for Next Generation Data Center' IT RD project [10038766]
- 'High Efficiency GaN-based Power Module for Harsh Environment Applications' R&D project of the Korea Ministry of Science, ICT and Future Planning [B551179-13-02-06]
- Korea Communications Agency (KCA) [R0101-14-0132] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [13AB4110, B551179-13-02-06] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.
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