Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 27, Issue 16, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/27/16/164206
Keywords
hot carriers; graphene; ultrafast dynamics; photoemission spectroscopy; Dirac fermions
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Funding
- VILLUM foundation
- Danish Council for Independent Research/Technology and Production Sciences
- Swiss National Science Foundation (NSF)
- EPSRC
- Royal Society
- Italian Ministry of University and Research [FIRBRBAP045JF2, FIRB-RBAP06AWK3]
- STFC
- European Union
- German Research Foundation [SPP 1459 Graphene]
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In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time-and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the p band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.
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