4.5 Article

Using dark states for exciton storage in transition-metal dichalcogenides

Journal

JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 28, Issue 3, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/28/3/034005

Keywords

transition-metal dichalcogenides; dark exciton states; exciton storage

Funding

  1. Office of Naval Research (ONR)
  2. Naval Research Laboratory (NRL)
  3. NRL through the ONR Summer Faculty Program
  4. NRL through the NRC Research Associateship Program

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We explore the possibility of storing excitons in excitonic dark states in monolayer semiconducting transition-metal dichalcogenides. In addition to being optically inactive, these dark states require the electron and hole to be spatially separated, thus inhibiting electron/hole recombination and allowing exciton lifetimes to be extended. Based on an atomistic exciton model, we derive transition matrix elements and an approximate selection rule showing that excitons could be transitioned into and out of dark states using a pulsed infrared laser. For illustration, we also present exciton population scenarios based on a population analysis for different recombination decay constants. Longer exciton lifetimes could make these materials candidates for applications in energy management and quantum information processing.

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