Journal
ELECTRONICS LETTERS
Volume 48, Issue 14, Pages 861-862Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2012.1347
Keywords
-
Categories
Funding
- Swedish Foundation of Strategic Research
Ask authors/readers for more resources
Reported is the realisation of a graphene FET microwave amplifier operating at 1 GHz, exhibiting a small-signal power gain of 10 dB and a noise figure of 6.4 dB. The amplifier utilises a matching inductor on the gate yielding a return loss of 20 dB. The design is optimised for maximum gain and the optimum noise figure is extracted by noise modelling and predicted to be close to 1 dB for the intrinsic graphene FET at this frequency. The presented results complement existing graphene FET applications and are promising for future graphene microwave circuits.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available