Journal
ELECTRONICS LETTERS
Volume 47, Issue 4, Pages 268-+Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2010.3705
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Funding
- Ministry of Internal Affairs and Communications
- Global COE Program for the 'High-Level global cooperation for leading-edge platform on access spaces'
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1000-times stable switching operation of an optical gate incorporating a Ge(2)Sb(2)Te(5) thin film with Si wire waveguides is reported. The phase of the Ge(2)Sb(2)Te(5) was reversibly changed from the amorphous state to the crystalline state by the application of pulsed laser irradiation. The extinction ratio was 9.7 dB on average, and did not decline throughout the entire sequence of 1000 switching events induced by irradiation. The wavelengths of the signal light and of the laser pulses were 1550 nm and 660 nm, respectively.
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