4.3 Article

Quantum dot laser diode with low threshold and low internal loss

Journal

ELECTRONICS LETTERS
Volume 45, Issue 1, Pages 54-55

Publisher

INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20092873

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Funding

  1. Air Force Research Laboratory (AFRL) [FA8650-08-C-1418]
  2. Army Research Laboratory [W911NF-06-1-0288]

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Data are presented demonstrating that a low-threshold quantum dot laser diode can achieve very low internal optical loss. The broad-area laser diode operates at the wavelength 1.22 mm and delivers 2 W of power from a 1.6 cm-long cavity with uncoated facets, with a lasing threshold current density of 10.4 A/cm(2). The laser diode's internal waveguide loss is extracted from cavity length measurements to be similar to 0.25 cm(-1). The interdependence of threshold current density and internal optical loss is discussed.

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