Journal
ELECTRONICS LETTERS
Volume 45, Issue 1, Pages 79-80Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20092309
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Funding
- Technology Strategy Board (TSB)
- Welsh Asembly Government through the 'Microbridge'
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The fabrication of a self-switching diode (SSD) from a single layer of n-type indium tin oxide [In2O3: Sn(ITO)] is reported. The material was grown using reactive thermal evaporation and nanostructured using a focused ion beam. The resultant device demonstrates strong current recti. cation, as well as a high threshold and breakdown voltage, owing to the higher density of states associated with the material, when compared to other reported SSD-device material. It is shown that this work could potentially lead to a range of new transparent devices based on ITO, without the need to develop high quality p-type material.
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