Journal
ELECTRONICS LETTERS
Volume 45, Issue 16, Pages 833-834Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2009.0336
Keywords
-
Categories
Funding
- Lithuanian State Science and Studies Foundation [C-07004/C-17/2009]
Ask authors/readers for more resources
A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/pHz.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available