Journal
ELECTRONICS LETTERS
Volume 45, Issue 10, Pages 521-U56Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2009.2684
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The characteristics of broadband superluminescent diodes (SLDs) are presented. The longitudinal bandgap modulated InGaAs/GaAs multiple quantum wells of broadband SLDs are grown by selective area metal organic vapour phase epitaxy (MOVPE) growth. The centre wavelength was 1060 nm. The 3 dB bandwidth was 130 nm and the 10 dB bandwidth was 174 nm. The output power was 0.3 mW.
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