Journal
ELECTRONICS LETTERS
Volume 45, Issue 11, Pages 566-U54Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2009.1056
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A resonant cavity light emitting diode combined with a submicron oxide current aperture, to pump individual InGaAs/GaAs quantum dots electrically, has been designed and fabricated. Pulsed correlation measurements demonstrated true single photon emission with g(2)(0) = 0 at a rate of 1 GHz.
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