Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

Laser diodes based on a novel active zone, namely type IIGa(0.50)In(0.50)As/GaSb quantum wells where the Ga(0.50)In(0.50)As layers are under high tensile strain (3.9%), have been investigated. Broad area diodes lased up to room temperature in the pulsed regime. Laser emission is centred at similar to 2.3 mu m, a technologically important wavelength, with a threshold-current density of 1.6 kA/cm(2) and a characteristic temperature T(0) = 50 K.