Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al(0.83)In(0.17)N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al(0.07)Ga(0.93)N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.