4.3 Article

Terahertz imaging with GaAs field-effect transistors

Journal

ELECTRONICS LETTERS
Volume 44, Issue 6, Pages 408-409

Publisher

INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20080172

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Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

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