Journal
ELECTRONICS LETTERS
Volume 44, Issue 15, Pages 911-913Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20081170
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The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology Lire presented. Such switches have demonstrated state-of-the-art performance: they exhibit I dB on-state insertion loss and better than 37 dB isolation. power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
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