Journal
ELECTRONIC MATERIALS LETTERS
Volume 10, Issue 2, Pages 321-324Publisher
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-013-3225-9
Keywords
resistive switching; bipolar; aluminum zinc oxide; sputter; transparent
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In this report, we employ an Al-doped ZnO (AZO) layer as a resistive switching layer for transparent resistive switching random access memory devices. An Indium-Tin-Oxide (ITO)/AZO/ITO/glass device exhibits a transmittance of similar to 80% (including a glass substrate) in the visible wavelength region and demonstrates reliable bipolar resistive switching behavior over d.c. 300 sweeping cycles with a low operation voltage and a very low variation in the switching threshold voltage. These results indicate that the AZO film is a promising transparent resistive switching layer.
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