Journal
ELECTRONIC MATERIALS LETTERS
Volume 9, Issue 4, Pages 517-521Publisher
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-013-0038-9
Keywords
graphene; transfer; epoxy bonding; PMMA; CVD
Categories
Funding
- National Research Foundation of Korea (NRF)
- Korean government (MEST) [2012R1A1A2007211]
- Priority Research Centers Program through the National Research Foundation of Korea (NRF) [2012-0005859]
- Ministry of Education, Science and Technology
- Technology Innovation Program (Industrial Strategic Technology Development Program) [10035430]
- Ministry of Knowledge Economy (MKE, Korea)
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This paper addresses a low damage-transfer method using epoxy bonding. In this method, first, graphene/metal film and a target substrate are bonded using epoxy; etching of the metal substrate follows. This method is free of organic particles caused by PMMA, and no cracks are spotted, which cracks are a major concern in the PMMA-transfer method. Raman data show that the epoxy-transferred graphene films have a higher 2D/G intensity ratio and a narrower 2D FWHM than those of films transferred by PMMA, if the epoxy is cured optimally. The Raman spectrum of the epoxy-transferred graphene showed G band splitting, probably due to the strain effect. This method is useful for the transfer of large area-graphene films.
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