Journal
ELECTRONIC MATERIALS LETTERS
Volume 6, Issue 4, Pages 151-154Publisher
KOREAN INST METALS MATERIALS
DOI: 10.3365/eml.2010.12.151
Keywords
Intermetallic compound; Pb-free solder; Cu-Zn wetting layer; diffusion barrier
Categories
Funding
- Korea Science and Engineering Foundation (KOSEF) through the Center for Electronic Packaging Materials (CEPM)
Ask authors/readers for more resources
A Cu-Zn wetting layer was very effective to depress the excessive growth of intermetallic compound (IMC). The effect of Zn addition to the Cu layer on the IMC growth and microvoid formation in the solder interface was similar to the effect of Zn addition into the Sn-Ag-Cu (SAC) solders. In this study, the mechanism of slow IMC growth at the SAC/Cu-Zn interfaces was investigated. As the aging time increased, Zn atoms accumulated at the Cu6Sn5/Cu interface and formed a Zn-rich layer. By adding Zn into the Cu wetting layer, the IMC growth was delayed due to the retardation of the formation of the Cu3Sn layer. Since the low driving force for the formation of Cu3Sn became smaller by adding Zn, the diffusion of Cu in Cu-Zn into SAC solder was delayed. Also, the CuZn phase formed at the Cu6Sn5/Cu-Zn interface plays a role as a diffusion barrier of interdiffusion of Cu and Sn.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available