Journal
ACS NANO
Volume 10, Issue 1, Pages 573-580Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b05596
Keywords
molybdenum disulfide; tungsten disulfide; vertical heterojunction; photodetector; flexible device
Categories
Funding
- National Natural Science Foundation of China [51222208, 51290273, 91433107]
- youth 973 program [2015CB932700]
- China Postdoctoral Science Foundation [2014M550303, 2014M551654]
- Jiangsu Province Postdoctoral Science Foundation [1301020A]
- Natural Science Foundation of Jiangsu Province [BK20130328]
- Doctoral Fund of Ministry of Education of China [20123201120026]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- Collaborative Innovation Center of Suzhou Nano Science and Technology, ARC DECRA [DE120101569]
- [DP140101501]
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Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photo-detectors, solar cells, and light-emitting diodes. However, these applications are significantly hampered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS2, MoS2, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS2 and MoS2 in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS2, MoS2, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS2/WS2 vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A.W-1 at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS2/WS2 heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.
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