4.6 Article

Low temperature fabrication of high performance p-n junction on the Ti foil for use in large-area flexible dye-sensitized solar cells

Journal

ELECTROCHIMICA ACTA
Volume 117, Issue -, Pages 1-8

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2013.11.096

Keywords

PEDOT; p-n junction; Dye-sensitized solar cell; Large-area; Low temperature

Funding

  1. National Natural Science Foundation of China [U1205112, 50842027]
  2. special research fund for the doctoral program of Higher University, Ministry of Education, China [20123501110001]

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A p-n junction of poly (3,4-ethylenedioxythiophene) (PEDOT) - dye-sensitized TiO2 is introduced into the large-area flexible dye-sensitized solar cell (DSSC) as an anode. This p-n junction is fabricated using a cyclic voltamrnetry electropolyrnerization of PEDOT onto a Ti foil substrate, and then treated in the aqueous ammonia, finally subjected to coating TiO2 by a doctor-scraping technique, all of preparations and treatments are carried out under low temperature. The obtained p-n junction forms a single directional pathway for electron transport which benefites the charge separation. The large-area (10 cm(2)) flexible DSSC with the p-n junction demonstrates an enhanced photovoltaic conversion efficiency of up to 6.51% compared to 4.89% for the DSSC without the p-n junction due to its low series resistance and charge-transfer resistance, high effective electron lifetime for recombination. As a result, the DSSC fabricated using the p-n junction can be suitable for high powered DSSC applications. (C) 2013 Elsevier Ltd. All rights reserved.

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