Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 48, Issue 49, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/48/49/495204
Keywords
pulsed magnetron sputtering; plasma diagnosis; deposition rate; plasma transport processes
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Funding
- National Partnerships Program [PN-II-PT-PCCA-2011-3.2-1340, 174/2012]
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High power impulse magnetron sputtering (HiPIMS) is a very attractive ionized physical vapour deposition technique which has been of great interest over the last decade. Thanks to the high ionization degree of the sputtered material (typically > 50%), this technique is used mainly for enhancing and tailoring coating properties. However, the lower deposition rate compared to the conventional direct-current (dc) magnetron sputtering process still represents a major drawback of HiPIMS. In this contribution, a study of the ability to control the peak target current in HiPIMS discharge through certain experimental parameters and, thus, to overcome the deposition rate limitation is presented. The HiPIMS was operated with ultra-short pulse durations (< 20 mu s) and two different operation modes have been used: single-pulse mode and multi-pulse mode, respectively. The peak target current was controlled by changing the target voltage, pulse duration, magnetic field, and target erosion depth. For a certain favorable combination of experimental parameters, it was found that the deposition rate value can be increased by a factor of up to 3.5, reaching values only 20% lower than those found in dc.
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