Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 48, Issue 37, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/48/37/375102
Keywords
photocathode; GaAs; negative electron affinity; dark-lifetime
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Funding
- STFC [ST/G008248/1] Funding Source: UKRI
- Science and Technology Facilities Council [ST/G008248/1] Funding Source: researchfish
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In this paper we report the first time demonstration under extremely high vacuum (XHV) conditions of the influence of O-2, CO2, CO, N-2, H-2 and CH4 on the quantum efficiency (QE) of negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes activated with Cs and NF3. The photocathodes were exposed to a small quantity (< 0.25 Langmuirs) of each gas species under test in a vacuum chamber with a typical base pressure of 1.5x10(-11) mbar, thereby minimising the influence of the residual gas in the photocathode response. It was found that exposure to N-2, H-2 and CH4 does not affect the QE of the photocathodes, whereas exposure to O-2 and CO2 lead to a substantial reduction in the QE of the photocathodes. Only small degradation in the QE under CO exposure was observed. Compared to those activated with Cs and O-2 in our previous study [1], photocathodes activated with Cs and NF3 are more stable, especially under exposure to CO.
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