Journal
ELECTROCHIMICA ACTA
Volume 69, Issue -, Pages 340-344Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2012.03.011
Keywords
Copper film; Cupric oxide; Copper tungsten oxide; Photoelectrochemical photocurrent switching; Electrochemical deposition
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Funding
- Korea Center for Artificial Photosynthesis (KCAP) located in Sogang University
- Ministry of Education, Science, and Technology (MEST) through the National Research Foundation of Korea [NRF-2009-C1AAA001-2009-0093879]
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CuO/CuWO4 p-n junction thin films were prepared by using electrodeposited Cu films with an acidic cupric lactate system (pH <= 5). The photoelectrochemical properties of CuO and CuWO4-CuO films were studied by photoresponse and current-potential characteristics under 1 sun illumination. The photocurrent of CuO films prepared by annealing Cu films electrodeposited at pH 5 is about 0.6 mA/cm(2) at -0.6 V vs Ag/AgCl. Both p-type and n-type behaviors occurred on CuO-CuWO4 film in the potential range from 0.8 V to -0.6 V vs Ag/AgCl. The photoelectrochemical photocurrent switching (PEPS) effect was observed in the case of p-CuO/n-CuWO4 heterojunction and the photocurrent switching potential is +0.33 V vs Ag/AgCl. (C) 2012 Elsevier Ltd. All rights reserved.
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