Journal
ELECTROCHIMICA ACTA
Volume 56, Issue 5, Pages 2140-2144Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2010.11.074
Keywords
Electrochemical capacitors; Co3O4 thin film; Chemical bath deposition; Capacitive properties
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Funding
- National Natural Science Foundation of China [50972165]
- Hunan Provincial Education Department [09C1055]
- Hunan Provincial Nonferrous Group [Y 2008-01-007]
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Co3O4 thin film is synthesized on ITO by a chemical bath deposition. The prepared Co3O4 thin film is characterized by X-ray diffraction, and scanning electron microscopy. Electrochemical capacitive behavior of synthesized Co3O4 thin film is investigated by cyclic voltammetry, constant current charge/discharge and electrochemical impedance spectroscopy. Scanning electron microscopy images show that Co3O4 thin film is composed of spherical-like coarse particles, together with some pores among particles. Electrochemical studies reveal that capacitive characteristic of Co3O4 thin film mainly results from pseudocapacitance. Co3O4 thin film exhibits a maximum specific capacitance of 227 Fg(-1) at the specific current of 0.2 A g(-1). The specific capacitance reduces to 152 Fg(-1) when the specific current increases to 1.4 A g(-1). The specific capacitance retention ratio is 67% at the specific current range from 0.2 to 1.4 A g(-1). (C) 2010 Elsevier Ltd. All rights reserved.
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