4.6 Article

Electrochemical growth of synthetic melanin thin films by constant potential methods

Journal

ELECTROCHIMICA ACTA
Volume 56, Issue 7, Pages 2954-2959

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2010.12.095

Keywords

Melanin; Electrochemical oxidation; THAM buffer; Polymerization; Amorphous semiconductor

Funding

  1. Korean government (MOEHRD) [KRF-2008-005-J00702]
  2. Center for Human Interface Nano Technology (HINT) [2010-0015037]

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Polymerized melanin thin films were electrochemically synthesized in a 5,6-dihydroxyindole precursor solution on indium tin oxide (ITO) substrates using the cyclic voltammetry and constant potential methods. Tris(hydroxymethyl)aminomethane (THAM) and phosphate buffer solutions were applied to prepare the films that were well deposited to the ITO substrates. The films that were synthesized in the THAM buffer solution exhibited a faster growth rate and better adhesion to the ITO electrodes than the films in the phosphate buffer. The film thickness linearly increased at the growth rate of 0.8 nm/s as the deposition time and number of cycles increased. Two electrochemical conditions produced similar thicknesses as well as physical properties in each buffer solution. However, the constant potential method demonstrated that this provides the synthetic advantages of faster deposition and less consumption of electric charge compared to the cyclic voltammetry route. (C) 2011 Elsevier Ltd. All rights reserved.

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