Journal
ELECTROCHIMICA ACTA
Volume 56, Issue 17, Pages 6245-6250Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2011.02.078
Keywords
Electroless plating; Diffusion barrier; Through-Si via; Au nanoparticle; Copper
Categories
Funding
- Japan Society for the Promotion of Science
- MEXT (Ministry of Education, Culture, Sports, Science and Technology)
Ask authors/readers for more resources
An all-wet process was achieved using electroless deposition of barrier and Cu seed layers for fabrication of a high aspect ratio through-Si via (TSV). Formation of a thin barrier metal layer of Ni-B, Co-B and Co-W-B is possible using a Au nanoparticle (AuNP) catalyst, which is densely adsorbed on the SiO2 of the TSV sidewall. A silane coupling agent of 3-aminopropyl-triethoxysilane is effective for enhancement of the density of adsorption for AuNP. A conformal electroless Cu layer is deposited on the barrier layer by displacement plating without a catalyst. The adhesion strength between the electroless barrier layer and the SiO2 substrate is increased by annealing at 300 degrees C. These results strongly suggest that an all-wet process for the formation of Cu-filled TSV with a high aspect ratio is practically possible. (C) 2011 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available