Journal
ELECTROCHIMICA ACTA
Volume 55, Issue 3, Pages 1072-1080Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2009.09.066
Keywords
Electrochemical process; Galvanic displacement; Bismuth telluride; Thin films; Thermoelectric materials; Semiconducting materials
Categories
Funding
- Ministry of Education, Science and Technology [2009-0082820]
- Hanbat National University, Republic of Korea
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BixTey thin films synthesized by galvanic displacement were systematically investigated by observing open circuit potential (OCP), surface morphology, microstructure and film composition. Surface morphologies and crystal structures of synthesized BixTey thin films were strongly depended on the type of the sacrificial materials (i.e., nickel (Ni), cobalt (Co) and iron (Fe)). Galvanically deposited BixTey thin films from the sacrificial Ni and Co thin films exhibited Bi2Te3 intermetallic compounds and hierarchical structures with backbones and sub-branches. A linear relationship of deposited Bi content in BixTey thin films as a function of [Bi3+]/[HTeO2+] ratio (within a range of less than 0.8) in the electrolyte was also observed. Surface morphologies of BixTey thin films were altered with the film composition. (C) 2009 Elsevier Ltd. All rights reserved.
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