4.6 Article

Cyclic voltammetry study of electrodeposition of Cu(In,Ga)Se2 thin films

Journal

ELECTROCHIMICA ACTA
Volume 54, Issue 11, Pages 3004-3010

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2008.12.016

Keywords

Cu(In,Ga)Se-2; Electrodeposition; Cyclic voltammetry; Underpotential deposition; Thin film

Funding

  1. Key Technologies R & D Program of Human Province in China [2007FJ4108]

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The electrodeposition of Cu(In,Ga)Se-2 has been investigated by cyclic voltammetry(CV) in a DMF-aqueous solution that contained citrate as a complexing agent. The effects of the citrate ion on the reduction potentials of Cu2+, In3+, Ga3+ and H2SeO3 were examined for a unitary system. Furthermore, a cyclic voltammetry study was performed in a ternary Cu-In-Se system, a quaternary Cu-In-Ga-Se system, and binary Cu-Se, In-Se and Ga-Se systems. The insertion of In and Ga into the solid phase may proceed by an underpotential deposition mechanism, which involves two different routes: In3+ and Ga3+ reduction by a surface-induced effect from Cu3Se2 and/or reaction with H2Se. (C) 2008 Elsevier Ltd. All rights reserved.

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