Journal
ELECTROCHIMICA ACTA
Volume 53, Issue 27, Pages 7908-7914Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2008.05.070
Keywords
silicon dioxide; gold-silicon composite films; plasma-enhanced chemical vapor deposition (PECVD); impedance; scanning electrochemical microscopy (SECM)
Categories
Funding
- Agence Nationale de la Recherche (ANR)
- Centre National de la Recherche Scientifique (CNRS)
- Institut National Polytechnique de Grenoble (INPG)
- Nord-Pas-de Calais
- Hanse Wissenschaftskolleg
- DFG [Wi 161718]
Ask authors/readers for more resources
The paper reports on the investigation of the electrochemical behavior of a thin gold him electrode coated with silicon dioxide (SiOx) layers of increasing thickness. Stable thin films of amorphous silica (SiOx) were deposited on glass slides coated with a 5 nm adhesion layer of titanium and 50 nm of gold, using plasma-enhanced chemical vapor deposition (PECVD) technique. Scanning electrochemical microscopy (SECM) and electrochemical impedance spectroscopy (EIS) were used to investigate the electrochemical behavior of the interfaces. In the case of SECM, the influence of the SiOx thicknesses on the electron transfer kinetics of three redox mediators was investigated. Normalized current-distance curves (approach Curves) were fitted to the theoretical model in order to find the effective heterogeneous first order rate constant (k(eff)) at the sample. EIS was in addition used to confirm the diffusion barrier character of the SiOx interlayer. (c) 2008 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available