4.6 Article

Pulsed laser deposition of the porous nickel oxide thin film at room temperature for high-rate pseudocapacitive energy storage

Journal

ELECTROCHEMISTRY COMMUNICATIONS
Volume 18, Issue -, Pages 92-95

Publisher

ELSEVIER SCIENCE INC
DOI: 10.1016/j.elecom.2012.02.023

Keywords

NiO; Thin film; Pulsed laser deposition; Supercapacitor

Funding

  1. NSFC [20973126]
  2. STCSM [10PJ1409600]

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This work reports the pulsed laser reactive deposition of the NiO thin film by ablating nickel targets in low-pressure O-2 atmosphere at room temperature. The electrode exhibits a porous structure, which facilitates ion transport in the electrode/electrolyte. When applied as an electrode, the porous NiO film exhibits the high specific capacitance (835 F g(-1) at 1 A g(-1)). Meanwhile, the film exhibits a superb rate capability. At a very high current density of 40 A g(-1) there is more than 59% retention in the capacitance relative to 1 A g(-1). Furthermore, the excellent cycling performance (94% capacitance retention after 1000 cycles) is achieved for the film electrode. These results demonstrate that pulsed laser deposition (PLD) is a very promising technique for making the film electrodes for applications in electrochemical energy storage. (C) 2012 Elsevier B.V. All rights reserved.

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