Journal
ELECTROCHEMISTRY COMMUNICATIONS
Volume 19, Issue -, Pages 39-42Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.elecom.2012.03.011
Keywords
Porous GaN; Electroless etching; Nanowires
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Funding
- US National Science Foundation [NSF1111739]
- US Department of Energy [DE FG02 07ER15851]
- US Army [W9132T-07-2-0003]
- Notre Dame Integrated Imaging Facility
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [1111739] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-FG02-07ER15851] Funding Source: U.S. Department of Energy (DOE)
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Metal-assisted chemical etching (MacEtch) is a top-down liquid semiconductor processing technology applied here to realize highly monodisperse collections of GaN nanowires. Subjecting n-type GaN wafers to AgNO3/HF simultaneously deposits Ag nanoparticle catalysts and initiates the MacEtch process. By varying the solution composition, concentration and etch time under UV illumination, different GaN nanostnictures are produced. GaN nanowires form initially on a supporting framework of porous GaN, which can be removed upon prolonged etching, leaving cones of monodisperse nanowires. These results suggest a mechanism in which areas surrounding Ag particles etch faster than areas directly underneath the catalyst and the formation of a localized galvanic cell and associated exothermic production of soluble GaF2(OH). (C) 2012 Elsevier B.V. All rights reserved.
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