Journal
ELECTROCHEMISTRY COMMUNICATIONS
Volume 10, Issue 5, Pages 757-760Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.elecom.2008.02.024
Keywords
compound semiconductor; metal-assisted chemical etching; self-organized structure; electroless plating; colloidal crystals
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Micro fabrication of the n-GaAs substrate surface was investigated by a combination of colloidal crystal templating, electroless plating and subsequent metal-assisted etching using noble metals as a catalyst. Ag and Cu nanosized particles were deposited site selectively to form metal-honeycomb patterns on GaAs using self-organized polystyrene spheres as a mask. By Ag-assisted etching, GaAs was effectively etched into a convex-array structure. Different anisotropic etching patterns were observed throughout the substrate after Ag-assisted etching, by changing the crystal-face orientation of n-GaAs from (100) to (111). (C) 2008 Elsevier B.V. All rights reserved.
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