Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 5, Pages K25-K27Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3548513
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Funding
- Engineering and Physical Science Research Council (UK)
- Advantage West Midlands (AWM)
- EPSRC [EP/G070326/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G070326/1] Funding Source: researchfish
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Metallurgical-grade silicon powder (10 m(2)/g surface area) has been porosified using a metal-assisted chemical etch process based on hydrofluoric acid-ferric chloride chemistry. By controlling the reagent concentrations and ratios, the degree of porosification has been varied. Initiating the reaction at temperatures below 0 degrees C, typically between -15 degrees C and -25 degrees C, yields etched powders with spectacularly increased surface area and pore volume (porosity). The reduced temperature, and its subsequent control, favors pore nucleation and propagation while minimizing bulk chemical etching. Using this process, mesoporous powders with surface areas up to 480 m(2)/g and pore volumes up to 0.52 ml/g have proved easily achievable at the 10 g batch level. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3548513] All rights reserved.
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