Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 9, Pages J55-J57Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3603844
Keywords
II-VI semiconductors; magnesium compounds; nanorods; photodetectors; ultraviolet detectors; wide band gap semiconductors; zinc compounds
Funding
- National Science Council of Taiwan [NSC 98-2221-E-150-005-MY3]
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The deep-ultraviolet photodetectors on glass substrates with MgZnO nanorods have been characterized. The measured transmittance spectra around the absorption edge results reveal that the MgZnO nanorods have the absorption edge (4.76 eV, 260 nm). The photoresponsity and UV-to-visible rejection ratio of the MgZnO nanorod-based photodetectors were 2.01 A/W and 6.24 x 10(2), respectively. It can be attributed to high surface-to-volume ratio of MgZnO nanorods and doping the Mg. The improved performance reveals that the MgZnO nanorods have great potential applications in deep-ultraviolet optoelectronic devices. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3603844] All rights reserved.
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